Published 1985
| Version v1
Book
Light-beam induced recrystallisation of SOI films
Creators
- 1. Centre National d'Etudes des Telecommunications, 38 Meylan, (France)
- 2. INSA/LPM, 69 Villeurbanne, (France)
Description
The main results obtained at the CNET in Zone Melting Recrystallisation of Silicon On Insulator films are presented. More emphasis is given on the results in lamp recrystallisation of 4-in wafers where the remaining defects have been localized with a heat sink structure
Additional details
Publishing Information
- Publisher
- Editions de la Physique.
- Imprint Place
- Les Ulis (France)
- ISBN
- 2-86883-010-2
- Imprint Title
- Energy beam-solid interactions and transient thermal processing
- Imprint Pagination
- 558 p.
- Journal Page Range
- p. 417-426.
Conference
- Title
- Annual conference of the Materials Research Society.
- Dates
- 13-15 May 1985.
- Place
- Strasbourg (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 18074928
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTALLIZATION; FILMS; LASER RADIATION; MOS TRANSISTORS; SILICON
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; PHASE TRANSFORMATIONS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS