Published March 2006 | Version v1
Journal article Metadata-only

Deep electron states in indium-doped Cd0.93Mn0.07Te DLTS study

Creators

  • 1. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
  • 2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

Description

Electron traps in indium doped Cd0.93Mn0.07Te were studied with Deep Level Transient Spectroscopy. Five electron traps were found (labeled as E1-E5). Energy levels ET of related defects are equal to ET1=0.09 eV, ET2=0.12 eV, ET3=0.18 eV, ET4=0.56 eV and ET5=0.65 eV. Three of them (E1,E2,E3) are related to the defects with thermally activated capture cross section. Electric field enhanced electron emission from the trap E4 was observed and described in the terms of the Poole-Frenkel-mechanism. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200564674

Additional details

Identifiers

DOI
10.1002/pssc.200564674;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
4
Journal Page Range
p. 817-820
ISSN
1610-1634

Conference

Title
12. international conference on II-VI compounds
Dates
12-16 Sep 2005
Place
Warsaw (Poland)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
37044003
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ACTIVATION ENERGY; CADMIUM TELLURIDES; CAPTURE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEPTH; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRON COLLISIONS; ELECTRON EMISSION; ENERGY LEVELS; EXPERIMENTAL DATA; INDIUM ADDITIONS; INTEGRAL CROSS SECTIONS; MANGANESE TELLURIDES; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TRAPS
Descriptors DEC
ALLOYS; CADMIUM COMPOUNDS; CHALCOGENIDES; COLLISIONS; CROSS SECTIONS; CRYSTAL STRUCTURE; DATA; DIMENSIONS; DISTRIBUTION; EMISSION; ENERGY; INDIUM ALLOYS; INFORMATION; MANGANESE COMPOUNDS; MATERIALS; NUMERICAL DATA; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
With 4 figs., 1 tab., 8 refs.. SICI: 1610-1634(200603)3:4<817::AID-PSSC200564674>3.0.TX;2-R