Features of defect generation in silicon-ion implanted gallium arsenide under rapid photon annealing

Investigations into structure and composition of GaAs layers implanted by silicon ions with doses lower than amorphization doses following fast photon annealing were carried out by means of X-ray diffractometry, secondary ion mass-spectroscopy and luminescenting electron microscopy. Essential difference of relaxation processes of radiation defects in layers following low-dose and high-dose implantation is detected. The analysis of the obtained results demonstrates that at earlier stages of annealing a space separation of radiation defects belonging to vacancy and interstitial types occurs and flow of nonequilibrium defects on the plate surface has a dominant role in this case. 5 refs.; 5 figs