Published 1985 | Version v1
Book

Study of thin conductive films produced at the diamond surface by hafnium and indium implantations

  • 1. Lisbon Univ. (Portugal)
  • 2. LNETI, Sacavem (Portugal)
  • 3. Bonn Univ. (Germany, F.R.)
  • 4. Konstanz Univ. (Germany, F.R.)

Description

Hafnium and indium implanted diamonds have been studied using time differential perturbed angular correlations, Rutherford backscattering/channeling and sheet resistivity measurement techniques before and after annealing. It is shown that for fluences between 1014 and 1015 ions/cm2 the conductivity increases by a factor of about 104 to 107 with sample annealing, and reaches a constant value very close to that of graphite. Changes in depth profiles of the amorphised layer, produced by annealing, were observed. The temperature dependence of the resistivity was measured between 10K and 500K for the 160 KeV hafnium implanted diamond after annealing at 8000C

Additional details

Publishing Information

Publisher
Editions de la Physique.
Imprint Place
Les Ulis (France)
ISBN
2-86883-010-2
Imprint Title
Energy beam-solid interactions and transient thermal processing
Imprint Pagination
558 p.
Journal Page Range
p. 193-198.

Conference

Title
Annual conference of the Materials Research Society.
Dates
13-15 May 1985.
Place
Strasbourg (France).