A 7.8 kV nanosecond pulse generator with a 500 Hz repetition rate
Description
Pseudospark switches are widely used in pulsed power applications. In this paper, we present the design and performance of a 500 Hz repetition rate high-voltage pulse generator to drive TDI-series pseudospark switches. A high-voltage pulse is produced by discharging an 8 μF capacitor through a primary windings of a setup isolation transformer using a single metal-oxide-semiconductor field-effect transistor (MOSFET) as a control switch. In addition, a self-break spark gap is used to steepen the pulse front. The pulse generator can deliver a high-voltage pulse with a peak trigger voltage of 7.8 kV, a peak trigger current of 63 A, a full width at half maximum (FWHM) of ∼30 ns, and a rise time of 5 ns to the trigger pin of the pseudospark switch. During burst mode operation, the generator achieved up to a 500 Hz repetition rate. Meanwhile, we also provide an AC heater power circuit for heating a H2 reservoir. This pulse generator can be used in circuits with TDI-series pseudospark switches with either a grounded cathode or with a cathode electrically floating operation. The details of the circuits and their implementation are described in the paper.
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/13/04/P04004Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 13
- Journal Issue
- 04
- Journal Page Range
- p. P04004
- ISSN
- 1748-0221
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51047409
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CAPACITORS; CATHODES; HIGH-VOLTAGE PULSE GENERATORS; HYDROGEN; MOSFET; PULSE RISE TIME; PULSES; SEMICONDUCTOR MATERIALS; SPARK GAPS
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRODES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FIELD EFFECT TRANSISTORS; FUNCTION GENERATORS; MATERIALS; MOS TRANSISTORS; NONMETALS; PULSE GENERATORS; SEMICONDUCTOR DEVICES; TIMING PROPERTIES; TRANSISTORS