Published 2010 | Version v1
Journal article Metadata-only

Conductivity anisotropy of layered BiTe-SbTe-heterostructures

Creators

  • 1. Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Halle (Germany)
  • 2. MPI fuer Mikrostrukturphysik, Halle (Germany)

Description

Transport properties of ordered bismuth and antimony tellurides are studied theoretically based on first-principle electronic structure calculations using a screened Korringa-Kohn-Rostoker Greens function method. The anisotropy of the electron mobility both in the bulk materials and in layered BiTe-SbTe-heterostructures is analyzed within the relaxation time approximation of the Boltzmann theory. The influence of doping on the electrical conductivity is discussed applying the rigid band approximation.

Additional details

Identifiers

URL
http://www.dpg-verhandlungen.de;

Publishing Information

Journal Title
Verhandlungen der Deutschen Physikalischen Gesellschaft
Journal Issue
Regensburg 2010 issue
Series
Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
Journal Page Range
[1 p.]
ISSN
0420-0195
CODEN
VDPEAZ

Conference

Title
DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature
Dates
21-26 Mar 2010
Place
Regensburg (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
42032872
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANISOTROPY; ANTIMONY TELLURIDES; BAND THEORY; BISMUTH TELLURIDES; BOLTZMANN STATISTICS; CHARGE TRANSPORT; CHARGED-PARTICLE TRANSPORT THEORY; COMPOSITE MATERIALS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GREEN FUNCTION; HETEROJUNCTIONS; LAYERS; RELAXATION TIME; THERMOELECTRIC PROPERTIES
Descriptors DEC
ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; FUNCTIONS; MATERIALS; MOBILITY; PARTICLE MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSPORT THEORY

Optional Information

Notes
Session: DS 13.3 Di 11:00; No further information available