Formation of a ZnO2 layer on the surface of single crystal ZnO substrates with oxygen atoms by hydrogen peroxide treatment
Creators
- 1. Department of Electronic Engineering, Sendai National College of Technology, 4-16-1 Ayashi-chuo, Sendai 989-3128 (Japan)
- 2. Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan)
Description
Formation of a ZnO2 layer by H2O2 treatment for single crystal ZnO (0001) substrates was studied. X-ray diffraction (XRD) peaks of ZnO2 with a pyrite structure were observed in XRD 2θ-ω scan patterns of the O-face of single crystal ZnO (0001) substrates with H2O2 treatment, but these peaks were not observed in patterns of the Zn-face of ZnO (0001) substrates with H2O2 treatment. XRD ω scan patterns of the ZnO (0002) plane of the O-face of single crystal ZnO (0001) substrates were broadened at the tail of the pattern by H2O2 treatment, but such broadening was not observed in that plane of the Zn-face. Grain structure of ZnO2 layers was clearly observed in atomic force microscopy (AFM) images for the O-face of ZnO (0001) substrates with H2O2 treatment. Spectra of X-ray photoelectron spectroscopy (XPS) of the O-face of ZnO (0001) substrates with H2O2 treatment showed a definite peak shift of the O 1s peak. It is thought that a pyrite structure of ZnO2 is easily formed around an O atom of the O-face of ZnO (0001) substrates. Results of XRD measurements, the AFM image, and XPS measurement of the H2O2-treated single crystal ZnO (1010) substrate that has oxygen atoms on the surface appeared to be the same as those of the O-face of ZnO (0001) substrates.
Additional details
Identifiers
- DOI
- 10.1063/1.4792941;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 113
- Journal Issue
- 11
- Journal Page Range
- p. 113501-113501.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44060074
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; HYDROGEN PEROXIDE; MICROSTRUCTURE; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; SPECTRA; SUBSTRATES; SURFACES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTRON SPECTROSCOPY; HYDROGEN COMPOUNDS; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PEROXIDES; PHOTOELECTRON SPECTROSCOPY; SCATTERING; SPECTROSCOPY; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2013 American Institute of Physics