Instability zones of interacting point defects in the periodical structures

A dependence of the size of the instability zone on the type and basic constants of the defects interaction potential, migration energy and other crystal constants is considered. The calculated sizes of instability zones for semiconductor, ion and metal crystals are in good agreement with experimental values available in the literature. A case of simultaneous action of the Coulomb and elastic potentials and associated appearance of a barrier between two interacting point defects are considered as well