Structure and properties of SiO2 and Ta2O5 films deposited by ion-plasma sputtering

Films of silicon dioxide and tantalum oxide are obtained on NaCl substrate by ion-plasma sputtering method in 200-400 deg C temperature range in two ways: 1 - silicon and tantalum sputtering with subsequent oxydation; 2 - deposition of silicon and tantalum in Ar+O2 (4-8 wt.%) environment. It is established that to obtain SiO2 films the first way is expedient and for Ta2O5 films the second way with 7,5 wt.% O content in mixture is preferable