Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well

Here in this paper, we report a room-temperature operating infrared photodetector based on the interband transition of an InAsSb/GaSb quantum well. The interband transition energy of 5-nm thick InAs_0.91Sb_0.09 embedded in the GaSb barrier is calculated to be 0.53 eV ($2.35\mu m$), which makes the absorption range of InAsSb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum. The fabricated photodetector exhibits a narrow response range from $2.0\mu m$ to $2.3\mu m$ with a peak around $2.1\mu m$ at 300 K. The peak responsivity is 0.4 A/W under −500-mV applied bias voltage, corresponding to a peak quantum efficiency of 23.8% in the case without any anti-reflection coating. At 300 K, the photodetector exhibits a dark current density of 6.05×10⁻³ A/cm² under −400-mV applied bias voltage and 3.25×10⁻⁵ A/cm² under zero, separately. The peak detectivity is $6.91\times {10}^{10}cm\cdot {Hz}^{1/2}/W$ under zero bias voltage at 300 K. (paper)