Collective atomic ordering processes during the low-temperature film deposition

The method of molecular dynamics is used to investigate the atomic ordering processes taking place during the low-temperature fcc metal deposition onto the close-packed plane. It is evidenced that the change in the surface layer structure is nondiffusive in character and is due to the collective atomic motion in the clusters. By the simulation method, a new phenomenon has been found, namely, the phenomenon of dislocation-induced coalescence, consisting in the growth of mean-size fcc clusters due to a decrease of the number of hcp clusters caused by the motion of Shockley surface dislocation. Most likely, The phenomenon observed is the general process for both fcc metals and hcp metals during the low-temperature deposition and supposes an experimental checking.