Published December 4, 2013
| Version v1
Journal article
A theoretical study of fluorographene as substrates for mono-/Bi-layer graphene
Creators
- 1. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China)
- 2. College of Nanoscale Science and Engineering, State University of New York, Albany 12203 (United States)
Description
Using density functional theory, we discover fluorographene (CF) could help significantly preserve the superb electronic properties of graphene, depending on lattice stacking-order. Compared with h-BN, CF produces a much weaker screening effect for bilayer graphene when external electric field is applied, revealing a huge advantage in gap engineering. The studies suggest that fluorographene could be a promising route towards implementing highly functional substrate or gate dielectric materials for graphene-inspired device applications
Additional details
Identifiers
- DOI
- 10.1063/1.4848318;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1566
- Journal Issue
- 1
- Journal Page Range
- p. 127-128
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 31. international conference on the physics of semiconductors
- Acronym
- ICPS 2012
- Dates
- 29 Jul - 3 Aug 2012
- Place
- Zurich (Switzerland)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45082974
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; ELECTRIC FIELDS; GRAPHENE; SUBSTRATES
- Descriptors DEC
- CALCULATION METHODS; CARBON; ELEMENTS; MATERIALS; NONMETALS; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC