Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate
Creators
- 1. Institute of Materials Science and Engineering, National Central University, Chung-Li City, Taoyuan, Taiwan (China)
- 2. Department of Chemical and Materials Engineering, National Central University, Chung-Li City, Taoyuan, Taiwan (China)
Description
Formation of Co germanosilicides on Si0.8Ge0.2 virtual substrates with a Co/Au/Co sandwich thin film after different heat treatments has been investigated. The sequence of phase formation is the same as the reaction of blanket Co thin film with (001)Si. The presence of thin interposing Au layers was found to significantly enhance the formation of low-resistivity CoSi2 on (001)Si0.8Ge0.2 substrates. The formation temperature of CoSi2 phase in the Co/Au/Co/(001)Si0.8Ge0.2 samples was lowered by about 200 deg. C compared to that of Co/(001)Si0.8Ge0.2 samples. From TEM and EDS analysis, some of Au atoms were found to diffuse from the original interface position to disperse within the CoSi2 layers during silicidation reactions. The mechanisms for the enhanced formation of CoSi2 in the Co/Au/Co/Si0.8Ge0.2 system were explained in the context of classical nucleation theory
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.02.141Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.02.141;
- PII
- S0169-4332(08)00437-6;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 254
- Journal Issue
- 19
- Journal Page Range
- p. 6211-6214
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 5. international symposium on control of semiconductor interfaces
- Acronym
- ISCSI-V
- Dates
- 12-14 Nov 2007
- Place
- Tokyo (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40032098
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COBALT SILICIDES; HEAT TREATMENTS; INTERFACES; LAYERS; PHASE TRANSFORMATIONS; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- COBALT COMPOUNDS; ELECTRON MICROSCOPY; FILMS; MICROSCOPY; SILICIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.