Published April 1, 2013 | Version v1
Journal article Metadata-only

Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell

Creators

  • 1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)
  • 2. ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing (China)
  • 3. Xi'an Jiaotong University, Xi'an 710049 (China)

Description

In this study, potential efficiency of InGaN/Si mechanically stacked two-junction solar cell is theoretically investigated by optimizing the band gap and thickness of the top InGaN cell. Results show that the optimum conversion efficiency is 35.2% under AM 1.5 G spectral illuminations, with the bandgap and thickness of top InGaN solar cell are 2.0 eV and 600 nm, respectively. The results and discussion would be helpful in designing and fabricating high efficiency InGaN/Si mechanically stacked solar cell in experiment

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2013.01.026

Additional details

Identifiers

DOI
10.1016/j.physb.2013.01.026;
PII
S0921-4526(13)00048-3;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
414
Journal Page Range
p. 110-114
ISSN
0921-4526
CODEN
PHYBE3

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45056767
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CONNECTORS; DESIGN; EFFICIENCY; ELECTRIC CONTACTS; EV RANGE; ILLUMINANCE; SIMULATION; SOLAR CELLS; THICKNESS
Descriptors DEC
CONDUCTOR DEVICES; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; ENERGY RANGE; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR EQUIPMENT

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.