Formation kinetics of various types of hydrogen-related donors in proton-implanted silicon

The method of C-V characteristics has been used to study the accumulation kinetics of double and shallow hydrogen-related donors in proton-implanted epitaxial silicon. It is shown that the kinetics corresponds to the first-order reactions. The activation energies ΔE1 = 2.3 eV and ΔE2 = 1.4 eV and the pre-exponential factors τ01 = 9.1 x 10-17 s and τ02 = 4.2 x 10-9 s were determined for both types of the donors, respectively. It was shown that the bistability of the electric properties of silicon is due to the double hydrogen-related donor.