Equivalent model for band-to-band tunneling simulation of direct-gap III-V semiconductor nanowires

We have proposed an equivalent model for use in the simulation of tunnel devices. The equivalent model reproduces not only the real band-structure but also the complex band-structure of a target system. It has the features of adjustable spatial resolution and high spatial symmetry. We have tested it by calculating the band-to-band transmission functions and the maximum current of direct-gap III-V semiconductor nanowires, and confirmed that it correctly reproduces the transport characteristics of the target system. The equivalent model enables us to substantially reduce the Hamiltonian matrix size, leading to speed-up the quantum transport simulation of tunnel devices, such as tunnel field-effect transistors. (author)