Published August 2009 | Version v1
Journal article

Mapping of valence energy losses via energy-filtered annular dark-field scanning transmission electron microscopy

  • 1. Max-Planck Institute for Metals Research, Stuttgart Center for Electron Microscopy, Heisenbergstrasse 3, 70569 Stuttgart (Germany)

Description

The advent of electron monochromators has opened new perspectives on electron energy-loss spectroscopy at low energy losses, including phenomena such as surface plasmon resonances or electron transitions from the valence to the conduction band. In this paper, we report first results making use of the combination of an energy filter and a post-filter annular dark-field detector. This instrumental design allows us to obtain energy-filtered (i.e. inelastic) annular dark-field images in scanning transmission electron microscopy of the 2-dimensional semiconductor band-gap distribution of a GaN/Al45Ga55N structure and of surface plasmon resonances of silver nanoprisms. In comparison to other approaches, the technique is less prone to inelastic delocalization and relativistic artefacts. The mixed contribution of elastic and inelastic contrast is discussed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.ultramic.2009.05.001

Additional details

Identifiers

DOI
10.1016/j.ultramic.2009.05.001;
PII
S0304-3991(09)00115-6;

Publishing Information

Journal Title
Ultramicroscopy (Amsterdam)
Journal Volume
109
Journal Issue
9
Journal Page Range
p. 1164-1170
ISSN
0304-3991
CODEN
ULTRD6

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.