Published July 2016 | Version v1
Journal article

Test of the leakage current and the junction capacitance for CdZnTe semiconductor detector

  • 1. Nuclear Technology Key Laboratory of Earth Science in Sichuan, Chengdu University of Technology, Chengdu (China)
  • 2. College of Aeronautics, Northwestern Polytechnical University, Xi'an (China)

Description

In order to study the characteristics of CdZnTe (CZT) semiconductor detector further, this article not only builds the test platform for the main characteristic parameters (the leakage current and the junction capacitance) and designs the test scheme, but also tests two detectors of different structures under different conditions and analyzes the test results. Through this experiment, we can better grasp the main features of the CZT detector, thus providing reference for its application in the field of radiation detection. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
36
Journal Issue
7
Journal Page Range
p. 690-693
ISSN
0258-0934

Optional Information

Notes
7 figs., 13 refs.