Published July 2016
| Version v1
Journal article
Test of the leakage current and the junction capacitance for CdZnTe semiconductor detector
- 1. Nuclear Technology Key Laboratory of Earth Science in Sichuan, Chengdu University of Technology, Chengdu (China)
- 2. College of Aeronautics, Northwestern Polytechnical University, Xi'an (China)
Description
In order to study the characteristics of CdZnTe (CZT) semiconductor detector further, this article not only builds the test platform for the main characteristic parameters (the leakage current and the junction capacitance) and designs the test scheme, but also tests two detectors of different structures under different conditions and analyzes the test results. Through this experiment, we can better grasp the main features of the CZT detector, thus providing reference for its application in the field of radiation detection. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 36
- Journal Issue
- 7
- Journal Page Range
- p. 690-693
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 53032544
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CAPACITANCE; CDZNTE SEMICONDUCTOR DETECTORS; DESIGN; LEAKAGE CURRENT; RADIATION DETECTION; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- CURRENTS; DETECTION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- 7 figs., 13 refs.