Device for vacuum ion processing of materials

Small-sized devices for ionic etching of material surfaces are developed and their characteristics are investigated. Devices allow to manufacture the convergent and divergent beams of ions with an energy up to 4-5 keV and electrical currents up to 20 mA. At using argon and freon as working gases with pressure about 0.1 Pa the rate of sputtering of metal, silicon and oxides reaches about 2-3 nm/s. The source of plasma working at pressure 5x10-2-10 Pa is developed on the basis of electron cyclotron resonance with frequency 2.45 GHz by a power up to 1 kV A. The device treats materials by both ions and excited molecules. The application of a device allows to remove the organic coatings and to oxidize surface layers of materials, specifically without action of charged particles on a surface. (authors)