Published March 1991
| Version v1
Journal article
Physical properties of Bi2Te3 based solid solutions in Bi2Te3-GaTe system
Creators
Description
By the methods of physicochemical analysis part of Bi2Te3-GaTe system phase diagram on the side of Bi2Te3 was studied. It is ascertained that in this part of the system a wide region (up to 6.0 mol.% GaTe) of solid solutions on the basis of rhombohedric Bi2Te3 is formed. Parameters of unit cells of rhombohedric solid solutions and unit cell volumes were calculated. Electric conductivity, thermo e.m.f., heat conductivity and Hall effect were studied. It is established that with the growth of GaTe content in the range of 0.5-5.0 mol.% the value of the alloy activation energy varies from 0.218 to 0.208 eV, reaching the maximum value ΔE=0.235 eV at GaTe content of 1 mol.%
Additional details
Additional titles
- Original title (Russian)
- Физические свойства твердых растворов на основе Би
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy
- Journal Volume
- 27
- Journal Issue
- 3
- Series
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Page Range
- 495-500
- ISSN
- 0002-337X
- CODEN
- IVNMA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 23057375
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH TELLURIDES; ELECTRIC CONDUCTIVITY; ENERGY GAP; GALLIUM TELLURIDES; HALL EFFECT; LATTICE PARAMETERS; SOLID SOLUTIONS; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; DISPERSIONS; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; MIXTURES; PHYSICAL PROPERTIES; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES