Boundary structure of Mo/Si multilayers for soft X-ray mirrors
Creators
- 1. Japan Atomic Energy Research Inst., Kizu, Kyoto (Japan). Kansai Research Establishment
- 2. Hokkaido Univ., Sapporo (Japan). Faculty of Engineering
- 3. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment
Description
Characterizations of Mo/Si multilayers for soft X-ray mirrors have been carried out by high-resolution transmission electron microscopy (TEM) and X-ray scatterings. The crystallite size of oriented Mo in the direction normal to the (110) plane has been found to be approximately equal to the designed thickness of the Mo layer below 8 nm. However, when the Mo layer thickness becomes greater than 8 nm, the crystallite size deviates from the designed thickness and saturates at about 10 nm. The Si layer thickness is smaller than the expected one, which is calculated from the periodic length and the Mo layer thickness, indicating that the mixed layer at the interface is formed in the Si layer. The thickness and density of the mixed layer at the Mo-on-Si interface are larger than those at the Si-on-Mo interface. The sum of the thickness of the mixed layer is about 1.4 nm, irrespective of the Mo/Si composition. Moreover, the density of the mixed layer at the Mo-on-Si interface becomes larger with the increase of the Mo content. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes and Review Papers
- Journal Volume
- 41
- Journal Issue
- 5A
- Journal Page Range
- p. 3052-3056
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 33036252
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BOUNDARY LAYERS; BRAGG REFLECTION; MIRRORS; MOLYBDENUM; MONOCRYSTALS; REFLECTIVITY; SILICON; SOFT X RADIATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY EQUIPMENT
- Descriptors DEC
- CRYSTALS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; FILMS; IONIZING RADIATIONS; LAYERS; METALS; MICROSCOPY; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; REFLECTION; REFRACTORY METALS; SEMIMETALS; SURFACE PROPERTIES; TRANSITION ELEMENTS; X RADIATION
Optional Information
- Notes
- 18 refs., 7 figs., 1 tab.