Published October 22, 2012 | Version v1
Journal article Metadata-only

Growth of wurtzite InN on bulk In2O3(111) wafers

Creators

  • 1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)
  • 2. Center for Computational Materials Science, Naval Research Laboratory, Washington, D.C. 20375 (United States)
  • 3. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin (Germany)

Description

A single phase InN epitaxial film is grown on a bulk In2O3(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In2O3 orientation relationship is found to be (0001) parallel (111) and [1100] parallel [112]. High quality of the layer is confirmed by the small widths of the x-ray rocking curves, the sharp interfaces revealed by transmission electron microscopy, the narrow spectral width of the Raman E2h vibrational mode, and the position of the photoluminescence band close to the fundamental band gap of InN.

Additional details

Identifiers

DOI
10.1063/1.4761985;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
101
Journal Issue
17
Journal Page Range
p. 172102-172102.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44039298
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ENERGY GAP; FILMS; INDIUM NITRIDES; INDIUM OXIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; EPITAXY; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SCATTERING; SPECTRA

Optional Information

Notes
(c) 2012 American Institute of Physics