Effects of activation time and temperature on electrical conductivity of novel cermet oxide cathodes for CRT applications
Creators
- 1. L G Philips Displays Blackburn, Philips Road, Blackburn, BB1 5RZ (United Kingdom)
- 2. School of Engineering, Sheffield Hallam University, City Campus, Pond Street, Sheffield, S1 1WB (United Kingdom)
- 3. Nanotechnology Research Laboratories, Department of Materials, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom)
Description
A new generation of oxide cermet cathodes was activated at 850 and 1150 deg. C for various lengths of time. The grain boundaries in the oxide layer increased with activation time for the cathodes activated at 850 deg. C. The growth of interfacial Al2O3 and WO3 layers and the concentration of free Ba on the surface for activation at 850 deg. C for a period less than 3 h were found to be different from the ones observed for longer than 3 h. This type of behaviour was not observed for the cathodes at 1150 deg. C. The conductivity measured at low temperatures on a cathode activated at 850 deg. C was much higher for long activation than for a short period of activation. Activation at 1150 deg. C for a period longer than 2 h produced a disruptive effect of low conductivity and high activation energy
Availability note (English)
Available online at http://stacks.iop.org/0022-3727/38/4090/d5_22_012.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0022-3727/38/4090/d5_22_012.pdf;
- DOI
- 10.1088/0022-3727/38/22/012;
- PII
- S0022-3727(05)01280-5;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 38
- Journal Issue
- 22
- Journal Page Range
- p. 4090-4095
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37053806
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ALUMINIUM OXIDES; CATHODES; CERMETS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; LAYERS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; TIME DEPENDENCE; TUNGSTEN OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; COMPOSITE MATERIALS; ELECTRICAL PROPERTIES; ELECTRODES; ENERGY; MATERIALS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS