Published February 1, 2007
| Version v1
Journal article
Comment on 'Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment' [J. Appl. Phys. 95, 586 (2004)]
Creators
- 1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
Description
A high work function on indium tin oxide (ITO) surfaces with O2 inductively coupled plasma (ICP) treatment was obtained in the paper: 'Mechanism for the increase of indium tin oxide work function by O2 inductively coupled plasma treatment' [Lee et al., J. Appl. Phys. 95, 586 (2004)]. They attributed this to the higher work function of the larger upward band bending and the larger electron affinity of the ITO near the surface by the ICP treatment. In this Comment, we indicate the mistake in their analysis of the observed result by synchrotron radiation photoemission spectroscopy
Additional details
Identifiers
- DOI
- 10.1063/1.2432301;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 101
- Journal Issue
- 3
- Journal Page Range
- p. 036104-036104.1
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39011442
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AFFINITY; ELECTRON EMISSION; INDIUM OXIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PLASMA; SEMICONDUCTOR MATERIALS; SURFACE TREATMENTS; SYNCHROTRON RADIATION; TIN OXIDES; WORK FUNCTIONS
- Descriptors DEC
- BREMSSTRAHLUNG; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; EMISSION; FUNCTIONS; INDIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SECONDARY EMISSION; SPECTROSCOPY; TIN COMPOUNDS
Optional Information
- Notes
- (c) 2007 American Institute of Physics