Challenges and benefits of designing readout ASICs in advanced technologies
Creators
- 1. Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Cracow (Poland)
Description
Basic trends in scaling CMOS technologies are reviewed briefly putting emphasis on advantages and limitations to designing readout ASIC. Scaling of noise performance in deep submicron MOSFETs is discussed in context of application in front-end circuits. A comparison of noise performance in deep submicron MOS transistors and in bipolar transistors is presented. Scaling of matching performance is reviewed and impacts on designing analogue circuits are discussed. Design challenges for mixed-signal ASICs related to analogue modelling, substrate coupling of digital noise, speed vs. power optimisation are reviewed briefly. Radiation effects in deep submicron CMOS technologies are reviewed and radiation hardening strategy towards Super LHC applications is discussed
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2007.05.302Additional details
Identifiers
- DOI
- 10.1016/j.nima.2007.05.302;
- PII
- S0168-9002(07)01190-4;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 579
- Journal Issue
- 2
- Journal Page Range
- p. 821-827
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 6. 'Hiroshima' symposium on the development and application of semiconductor detectors
- Dates
- 11-15 Sep 2006
- Place
- Carmel, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39060992
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CERN LHC; COMPARATIVE EVALUATIONS; DESIGN; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; MOSFET; NOISE; OPTIMIZATION; PERFORMANCE; RADIATION HARDENING; READOUT SYSTEMS; SIGNALS; SIMULATION; SUBSTRATES
- Descriptors DEC
- ACCELERATORS; CYCLIC ACCELERATORS; ELECTRONIC CIRCUITS; EVALUATION; FIELD EFFECT TRANSISTORS; HARDENING; MICROELECTRONIC CIRCUITS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; STORAGE RINGS; SYNCHROTRONS; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.