Published October 1, 2016 | Version v1
Journal article Metadata-only

Self-compliance multilevel storage characteristic in HfO2-based device

Creators

  • 1. Gansu Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000 (China)
  • 2. Cuiying Honors College, Lanzhou University, Lanzhou 730000 (China)
  • 3. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)

Description

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO2-based memory device with Ag/HfO2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s, which may be useful for the applications in nonvolatile multilevel storage. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/25/10/106102

Additional details

Identifiers

DOI
10.1088/1674-1056/25/10/106102;

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
25
Journal Issue
10
Journal Page Range
[3 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49016736
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRIC POTENTIAL; GOLD; HAFNIUM OXIDES; MEMORY DEVICES; SILVER
Descriptors DEC
CHALCOGENIDES; ELEMENTS; HAFNIUM COMPOUNDS; METALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS