Published January 20, 2014 | Version v1
Journal article Metadata-only

Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier

Creators

  • 1. Department of Electronic Engineering, Tohoku University, Sendai 980-8579 (Japan)

Description

We report on the observation of anisotropic magnetoresistance (AMR) in vertical asymmetric nano-contacts (NCs) made through AlOx nano-oxide layer (NOL) formed by ion-assisted oxidation method in the film stack of Co/AlOx-NOL/Pt. Analysis of NC formation was based on in situ conductive atomic force microscopy and transmission electron microscopy. Depending on the purity of NCs from Al contamination, we observed up to 29% AMR ratio at room temperature

Additional details

Identifiers

DOI
10.1063/1.4862462;
arXiv
arXiv:1312.4061v1;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
3
Journal Page Range
p. 032405-032405.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45101962
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM OXIDES; ANISOTROPY; ASYMMETRY; ATOMIC FORCE MICROSCOPY; COBALT; INTERFACES; LAYERS; MAGNETORESISTANCE; NANOSTRUCTURES; OXIDATION; PLATINUM; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; FILMS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METALS; TEMPERATURE RANGE; TRANSITION ELEMENTS

Optional Information

Notes
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