Estimation of mean-glandular dose from monitoring breast entrance skin air kerma using a high sensitivity metal oxide semiconductor field effect transistor (MOSFET) dosimeter system in mammography
Description
Estimation of mean-glandular dose (MGD) has been investigated in recent years due to the potential risks of radiation-induced carcinogenesis associated with the mammographic examination for diagnostic radiology. In this study, a new technique for immediate readout of breast entrance skin air kerma (BESAK) using high sensitivity MOSFET dosimeter after mammographic projection was introduced and a formula for the prediction of tube output with exposure records was developed. A series of appropriate conversion factors was applied to the MGD determination from the BESAK. The study results showed that signal response of the high sensitivity MOSFET exhibited excellent linearity within mammographic dose ranges, and that the energy dependence was less than 3% for each anode/filter combination at the tube potentials 25-30 kV. Good agreement was observed between the BESAK and the tube exposure output measurement for breasts thicker than 30 mm. In addition, the air kerma estimated from our prediction formula provided sufficient accuracy for thinner breasts. The average MGD from 120 Asian females was 1.5 mGy, comparable to other studies. Our results suggest that the high sensitivity MOSFET dosimeter system is a good candidate for immediately readout of BESAK after mammographic procedures
Additional details
Identifiers
- PII
- S0969804302001720;
Publishing Information
- Journal Title
- Applied Radiation and Isotopes
- Journal Volume
- 57
- Journal Issue
- 6
- Journal Page Range
- p. 791-799
- ISSN
- 0969-8043
- CODEN
- ARISEF
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34008012
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES;
- Descriptors DEI
- DIAGNOSTIC TECHNIQUES; DOSEMETERS; KERMA; MAMMARY GLANDS; MOSFET; RADIATION DOSES; SENSITIVITY; SKIN
- Descriptors DEC
- BODY; DOSES; FIELD EFFECT TRANSISTORS; GLANDS; MEASURING INSTRUMENTS; MOS TRANSISTORS; ORGANS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.