Published December 2002 | Version v1
Journal article

Estimation of mean-glandular dose from monitoring breast entrance skin air kerma using a high sensitivity metal oxide semiconductor field effect transistor (MOSFET) dosimeter system in mammography

Description

Estimation of mean-glandular dose (MGD) has been investigated in recent years due to the potential risks of radiation-induced carcinogenesis associated with the mammographic examination for diagnostic radiology. In this study, a new technique for immediate readout of breast entrance skin air kerma (BESAK) using high sensitivity MOSFET dosimeter after mammographic projection was introduced and a formula for the prediction of tube output with exposure records was developed. A series of appropriate conversion factors was applied to the MGD determination from the BESAK. The study results showed that signal response of the high sensitivity MOSFET exhibited excellent linearity within mammographic dose ranges, and that the energy dependence was less than 3% for each anode/filter combination at the tube potentials 25-30 kV. Good agreement was observed between the BESAK and the tube exposure output measurement for breasts thicker than 30 mm. In addition, the air kerma estimated from our prediction formula provided sufficient accuracy for thinner breasts. The average MGD from 120 Asian females was 1.5 mGy, comparable to other studies. Our results suggest that the high sensitivity MOSFET dosimeter system is a good candidate for immediately readout of BESAK after mammographic procedures

Additional details

Identifiers

PII
S0969804302001720;

Publishing Information

Journal Title
Applied Radiation and Isotopes
Journal Volume
57
Journal Issue
6
Journal Page Range
p. 791-799
ISSN
0969-8043
CODEN
ARISEF

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
34008012
Subject category
S07: ISOTOPES AND RADIATION SOURCES;
Descriptors DEI
DIAGNOSTIC TECHNIQUES; DOSEMETERS; KERMA; MAMMARY GLANDS; MOSFET; RADIATION DOSES; SENSITIVITY; SKIN
Descriptors DEC
BODY; DOSES; FIELD EFFECT TRANSISTORS; GLANDS; MEASURING INSTRUMENTS; MOS TRANSISTORS; ORGANS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.