Published December 2018
| Version v1
Journal article
Multiple Upsets Induced by Protons in 90-nm SRAMs
- 1. National Research Centre "Kurchatov Institute", Konstantinov Petersburg Nuclear Physics Institute (Russian Federation)
- 2. LLC O2 Light Systems (Russian Federation)
- 3. LLC NPC Granat (Russian Federation)
Description
The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.
Additional details
Identifiers
Publishing Information
- Journal Title
- Technical Physics Letters
- Journal Volume
- 44
- Journal Issue
- 12
- Journal Page Range
- p. 1205-1207
- ISSN
- 1063-7850
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51091811
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; INTEGRATED CIRCUITS; IRRADIATION; MEV RANGE; PROTONS; RADIATION EFFECTS
- Descriptors DEC
- BARYONS; DATA; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HADRONS; INFORMATION; MICROELECTRONIC CIRCUITS; NUCLEONS; NUMERICAL DATA
Optional Information
- Copyright
- Copyright (c) 2018 Pleiades Publishing, Ltd.