Peculiarities of defect and impurity behaviour in gallium arsenide during surface gettering

Spatial redistribution of anti-site defects after surface gettering of GaAs wafers coated by an yttrium film has been found. It has been established that both one- and two-side coating of the GaAs wafer with an yttrium film followed by a heat treatment allows a high-resistivity (n = 1012 cm-3) material to be obtained with uniform distributions of both electrons and the effective hole lifetime in a depth of 1.6 mm. The material obtained is suitable for creating Schottky barriers and structures for use in both high-power devices and x-ray detectors