Dielectric properties for SF6 and SF6 mixtures predicted from basic data
- 1. Westinghouse RandD Center, Pittsburgh, Pennsylvania 15235
Description
We have calculated α and eta, the ionization and attachment coefficients, and (E/N) *, the limiting breakdown electric-field--to--gas-density ratio, in SF6 and SF6 mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The calculations require a knowledge of several electron collision cross sections. Published momentum transfer and ionization cross sections for SF6 were used. We measured various attachment cross sections for SF6 using electron-beam techniques with mass spectrometric ion detection. We determined a total cross section for electronic excitation of SF6 by comparing the predicted values of α, eta, and (E/N) * with our measured values obtained from spatial current growth experiments in SF6 in uniform fields over an extended range of E/N. With this self-consistent set of SF6 cross sections, together with published He and N2 cross sections, it was then possible to predict the dielectric properties of SF6-He and SF6-N2 mixtures. Published experimental values of α for the SF6-He mixtures lie between the values of α calculated with and without ionization of SF6 by excited He atoms. Published experimental values of (E/N) * agree with our calculations to within 5% in both the SF6-He and the SF6-N2 mixtures
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 50
- Journal Issue
- 11
- Series
- J. Appl. Phys.
- Journal Page Range
- 6789-6796
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11517084
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABLATION; ALUMINIUM; FOILS; LASER RADIATION; LONGITUDINAL MOMENTUM; NEODYMIUM LASERS; PHOTODIODES; PHYSICAL RADIATION EFFECTS; PULSES; SPECTROMETERS; X RADIATION
- Descriptors DEC
- AMPLIFIERS; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; LASERS; LINEAR MOMENTUM; MEASURING INSTRUMENTS; METALS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SOLID STATE LASERS