Development of gamma ray monitor using CdZnTe semiconductor detector

In this study, we aimed to develop a new X-ray and gamma ray monitor using the CdZnTe semiconductor detector, which have high sensitivity at room temperature. The pulse height spectra and the detection efficiencies of 10x10 mm2 by 2 mm thick CdZnTe detector were measured in the energy range of 10 keV to 1.8 MeV by using monoenergetic X-ray and gamma ray sources. The measured results showed very good agreement with the results calculated using the EGS4 Monte Carlo code taking into account the charge collection efficiency in the detector. By using two CZT detectors of 10x10x2 mm3 and 3x3x2 mm3 coupled with a filter, the weighted sum of a few energy channels with different cut-off energies was finally found out to realize a flat energy response to equivalent dose (counts per mSv) within ±30% or ±10% deviation. (author)