Published April 1996
| Version v1
Journal article
Comparison of radiation effects on the operation of MOS devices under various types of nuclear radiation
Creators
- 1. Joint Inst. for Nuclear Research, Dubna (Russian Federation)
- 2. Instytut Chemii i Teckniki Jadrowej, Warsaw (Poland)
Description
The simulation of radiation effects in semiconductor devices caused by fast neutrons is achieved with the use of accelerated heavy ions with energies exceeding 1 MeV/n. Experimental results on degradation of shift register operation under irradiation with heavy ions, electrons, γ-rays and fast neutrons are presented and compared. Both dynamic and static effects are discussed. Models explaining the different radiation effects are presented. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 111
- Journal Issue
- 1-2
- Journal Page Range
- p. 84-86.
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27060189
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; COMPUTER CODES; ELECTRON BEAMS; FAST NEUTRONS; GAMMA RADIATION; ION BEAMS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- BARYONS; BEAMS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; EVALUATION; FERMIONS; HADRONS; IONIZING RADIATIONS; LEPTON BEAMS; NEUTRONS; NUCLEONS; PARTICLE BEAMS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS