Measurement of implant damage in sapphire with thermal wave technology

This paper describes the use of thermal wave technology for monitoring implant damage in sapphire substrate wafers. The information obtained is not easily obtainable from other techniques, such as UV reflectance or IR reflectance measurements. In CMOS/SOS device and circuit fabrication it is often desirable to monitor the effects of implant damage in the underlying sapphire substrate and at the edge of the silicon epi islands before and after anneals at various temperatures. This is particularly relevant to radiation-hard devices fabricated on silicon-on-sapphire (SOS)