Published July 2002
| Version v1
Journal article
Bi epitaxy on polar InSb(111)A/B faces
Creators
- 1. Department of Material Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
- 2. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)
- 3. Department of Physics, University of Ulsan, Ulsan, 680-749, South Korea (Korea, Republic of)
Description
Bi thin films have been grown on InSb(111)A/B substrates using molecular beam epitaxy. We have observed different Bi atomic surface structures on polar InSb(111)A and B faces as well as thickness dependent surface structures on the A face. Bi deposited on InSb(111)B shows a (1x1) surface structure, i.e., no surface reconstruction. However, Bi on InSb(111)A shows a (2x2) structure for thicknesses less than 16 Aa, thereafter changing to a (1x1) structure. On both surfaces, Bi grows in a layer-by-layer growth mode with high crystallinity and sharp interfaces
Additional details
Identifiers
- DOI
- 10.1116/1.1479735;
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Journal Volume
- 20
- Journal Issue
- 4
- Journal Page Range
- p. 1191-1194
- ISSN
- 0734-2101
- CODEN
- JVTAD6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35032124
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH; CRYSTAL GROWTH; CRYSTAL STRUCTURE; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; SURFACE PROPERTIES
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; INDIUM COMPOUNDS; METALS; PNICTIDES
Optional Information
- Notes
- (c) 2002 American Vacuum Society.