Published 1989
| Version v1
Miscellaneous
Analysis of fast thermal activated processes in silicon monocrystal
Description
Short note
Additional details
Additional titles
- Original title (Russian)
- Анализ быстрых термически активируемых процессов в монокристаллах кремния методом ROR/К
Publishing Information
- Imprint Title
- Summaries of reports of 19. All-union conference on physics of charged particles interaction with crystals
- Imprint Pagination
- 192 p.
- Journal Page Range
- p. 167.
- Report number
- INIS-SU--144/A
Conference
- Title
- 19. All-union conference on physics of charged particles interaction with crystals.
- Dates
- 29-31 May 1989.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 21023065
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; DIFFUSION; DISLOCATIONS; INDIUM IONS; ION IMPLANTATION; MONOCRYSTALS; PHASE STUDIES; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; SILICON; SPECTROSCOPY
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELASTIC SCATTERING; ELEMENTS; HEAT TREATMENTS; IONS; LINE DEFECTS; RADIATION EFFECTS; SCATTERING; SEMIMETALS
Optional Information
- Notes
- Imprint:Tezisy dokladov 19. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.