Published January 15, 1986 | Version v1
Journal article Metadata-only

Some electrical properties of praseodymium oxide films produced by oxidation of thin metal films

Creators

  • 1. Osaka Univ., Suita (Japan). Dept. of Applied Chemistry

Description

A praseodymium oxide thin film produced by the oxidation of a thin metal film exhibited a decrease in the electrical resistivity in an oxygen atmosphere above 3300C. From the oxygen partial pressure dependence of the electrical resistivity, it was clear that the oxidized praseodymium thin film acted as a p-type semiconductor above 6300C and a n-type semiconductor at 400-6300C. Also, the oxidized thin film showed a break in the log sigma versus 1/T plot around 6300C. The activation energy was 1.75 eV for p-type electronic conduction and 0.88 eV for the range of n-type behaviour. The conductivity in the range of the p-type behaviour showed a dependence of Psub(O2)sup(1/4). (orig.)

Additional details

Publishing Information

Journal Title
J. Less-Common Met.
Journal Volume
115
Journal Issue
2
Series
J. Less-Common Met.
Journal Page Range
281-286
ISSN
0022-5088
CODEN
JCOMA

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
17087200
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ACTIVATION ENERGY; CONTROLLED ATMOSPHERES; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; FILMS; HIGH PRESSURE; HIGH TEMPERATURE; LOW PRESSURE; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEDIUM VACUUM; N-TYPE CONDUCTORS; OXIDATION; OXYGEN; P-TYPE CONDUCTORS; PRASEODYMIUM; PRASEODYMIUM OXIDES; PRESSURE DEPENDENCE; TEMPERATURE DEPENDENCE
Descriptors DEC
CHALCOGENIDES; CHEMICAL REACTIONS; DATA; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; INFORMATION; MATERIALS; METALS; NONMETALS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PRASEODYMIUM COMPOUNDS; RARE EARTH COMPOUNDS; RARE EARTHS; SEMICONDUCTOR MATERIALS