Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine

A thermodynamic model is developed to describe the low-temperature molecular beam epitaxy of GaN with hydrazine. We consider an epitaxial process which takes into account the physisorbed states of the Ga atoms and hydrazine molecules on the (0001) A and B planes of GaN. The incident and desorbed fluxes are considered as a one-dimensional ideal gas. The thermodynamic affinity is used in order to estimate the deviation from thermodynamic equilibrium at the growth reactions. The thermodynamic characteristics of the growth reactions are estimated and they are in excellent agreement with experimental results