Experimental study of a SINIS detector response time at 350 GHz signal frequency

Response time constant of a SINIS bolometer integrated in an annular ring antenna was measured at a bath temperature of 100 mK. Samples comprising superconducting aluminium electrodes and normal-metal Al/Fe strip connected to electrodes via tunnel junctions were fabricated on oxidized Si substrate using shadow evaporation. The bolometer was illuminated by a fast black-body radiation source through a band-pass filter centered at 350 GHz with a passband of 7 GHz. Radiation source is a thin NiCr film on sapphire substrate. For rectangular 10÷100 μs current pulse the radiation front edge was rather sharp due to low thermal capacitance of NiCr film and low thermal conductivity of substrate at temperatures in the range 1-4 K. The rise time of the response was ∼1-10 μs. This time presumably is limited by technical reasons: high dynamic resistance of series array of bolometers and capacitance of a long twisted pair wiring from SINIS bolometer to a room-temperature amplifier. (paper)