Published February 1, 2004 | Version v1
Report

Radiation aging of stockpile and space-based microelectronics

Description

This report describes an LDRD-supported experimental-theoretical collaboration on the enhanced low-dose-rate sensitivity (ELDRS) problem. The experimental work led to a method for elimination of ELDRS, and the theoretical work led to a suite of bimolecular mechanisms that explain ELDRS and is in good agreement with various ELDRS experiments. The model shows that the radiation effects are linear in the limit of very low dose rates. In this limit, the regime of most concern, the model provides a good estimate of the worst-case effects of low dose rate ionizing radiation

Availability note (English)

Available from http://infoserve.sandia.gov/sand_doc/2003/034783.pdf; PURL: https://www.osti.gov/servlets/purl/918391-CBYhgy/

Additional details

Publishing Information

Imprint Pagination
20 p.
Report number
SAND--2003-4783

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
39104621
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
AGING; DOSE RATES; IONIZING RADIATIONS; LOW DOSE IRRADIATION; MICROELECTRONICS; RADIATION EFFECTS; SENSITIVITY; STOCKPILES
Descriptors DEC
IRRADIATION; RADIATIONS

Optional Information

Contract/Grant/Project number
AC04-94AL85000
Notes
doi 10.2172/918391
Funding organization
US Department of Energy (United States)