Proximity-coupled high Tc Josephson junctions: Do they exist?
Creators
- 1. California Inst. of Tech., Pasadena, CA (United States). Jet Propulsion Lab.
Description
A significant portion of the worldwide effort to develop high-Tc Josephson junctions for electronic applications has been devoted to superconductor-normal-superconductor (SNS) junctions. This paper expands upon the authors recent review of this subject. Numerous groups have reported nominally-SNS devices with a variety of geometries and normal interlayers. The electrical properties of these junctions have been interpreted almost exclusively with reference to conventional proximity effect theory, which describes the behavior of low-Tc SNS devices very well. In fact, however, almost all high-Tc SNS junctions are better understood by recognizing that transport occurs through unintended pinholes in the normal interlayers. It is only recently that proximity effect theory was successfully applied to any high-Tc SNS device, despite vigorous but unsupported prior claims. The evolution of research on high-Tc SNS junctions is instructive in that it illustrates the danger inherent in assuming that device behavior can be interpreted by simply applying the most obvious theory connected with its intended structure
Additional details
Publishing Information
- Publisher
- Society of Photo-Optical Instrumentation Engineers.
- Imprint Place
- Bellingham, WA (United States)
- ISBN
- 0-8194-2071-9
- Imprint Title
- Oxide superconductor physics and nano-engineering II
- Imprint Pagination
- 578 p.
- Series
- Proceedings/SPIE, Volume 2697.
- Journal Page Range
- p. 452-457.
Conference
- Title
- Photonics West '96; Conference on Quantum Well and Superlattice Physics VI.
- Dates
- 27 Jan - 2 Feb 1996.
- Place
- San Jose, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 29012704
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- GRAIN BOUNDARIES; HIGH-TC SUPERCONDUCTORS; JOSEPHSON EFFECT; JOSEPHSON JUNCTIONS; PROXIMITY EFFECT; SUPERCONDUCTING DEVICES
- Descriptors DEC
- CRYSTAL STRUCTURE; MICROSTRUCTURE; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTORS
Optional Information
- Funding organization
- Department of the Navy, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States).
- Secondary number(s)
- CONF-960163--.