Published November 1991
| Version v1
Journal article
Focused ion-beam assisted deposition of tungsten and carbon
- 1. Bristol Univ. (United Kingdom). Interface Analysis Centre
- 2. Rutherford Appleton Lab., Chilton (United Kingdom)
- 3. Oxford Instruments Ltd., Eynsham (United Kingdom)
Description
The process of ion-beam assisted deposition of tungsten and carbon by gallium ion has been studied using Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS). The bulk composition of tungsten and organic deposits was found to be 70/14/15/1 W/Ga/C/O and 64.4/34/1/0.6C/Ga/O/Si at.% respectively. The deposition of tungsten results in the formation of a stable silicide complex at the interfacial region. The process of carbon deposition occurs by free radical formation and covalent bonding of organic molecules to the surface. (author)
Additional details
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 3
- Journal Issue
- suppl.A
- Series
- J. Phys., Condens. Matter.
- Journal Page Range
- S199-S206
- ISSN
- 0953-8984
- CODEN
- JCOME
Conference
- Title
- 9. Interdisciplinary surface science conference.
- Dates
- 22-25 Mar 1991.
- Place
- Southampton (United Kingdom).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 23020809
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; CARBON; COVALENCE; DEPOSITION; FOCUSING; GALLIUM IONS; ION BEAMS; ORGANIC COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; RADICALS; SILICIDES; TUNGSTEN; X-RAY SPECTROSCOPY
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; ELECTRON SPECTROSCOPY; ELEMENTS; IONS; METALS; NONMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENTS