Published 2002
| Version v1
Miscellaneous
Diffusion and activation of Si implanted into GaAs
Creators
- 1. Institute of Electronic Materials Technology, Warsaw (Poland)
- 2. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
- 3. Institute of Electron Technology, Warsaw (Poland)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Imprint Pagination
- 174 p.
- Journal Page Range
- p. 83
Conference
- Title
- 4. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2002
- Dates
- 10-13 Jun 2002
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 34075144
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ANNEALING; DEPTH; DIFFUSION; FERMI LEVEL; GALLIUM ARSENIDES; ION IMPLANTATION; MASS SPECTROSCOPY; OPTIMIZATION; RADIATION DOSES; SILICON ADDITIONS; SILICON IONS; SPATIAL DISTRIBUTION; SUBSTRATES; TELLURIUM ADDITIONS; ZINC ADDITIONS
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; DOSES; ENERGY LEVELS; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; PNICTIDES; SILICON ALLOYS; SPECTROSCOPY; TELLURIUM ALLOYS; ZINC ALLOYS