Published January 2006 | Version v1
Journal article

High-energy ion tracks in thin films

  • 1. Sandia National Laboratories, Nanostructure and Semiconductor Physics, Mail Stop 1056, Albuquerque, NM 87185-1056 (United States)
  • 2. University of North Texas, Denton, TX 76203 (United States)
  • 3. Lawrence Livermore National Laboratory, Livermore, CA (United States)

Description

High-energy ion tracks (374 MeV Au26+) in thin films were examined with transmission electron microscopy to investigate nanopore formation. Tracks in quartz and mica showed diffraction contrast. Tracks in sapphire and mica showed craters formed at the positions of ion incidence and exit, with a lower-density track connecting them. Direct nanopore formation by ions (without chemical etching) would appear to require film thicknesses less than 10 nm

Additional details

Identifiers

DOI
10.1016/j.nimb.2005.08.005;
PII
S0168-583X(05)01474-6;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
242
Journal Issue
1-2
Journal Page Range
p. 79-81
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
14. international conference on ion beam modification of materials
Dates
5-10 Sep 2004
Place
Pacific Grove, CA (United States)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37068385
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRATERS; DENSITY; DIFFRACTION; ETCHING; IONS; MEV RANGE 100-1000; MICA; PARTICLE TRACKS; QUARTZ; SAPPHIRE; SPUTTERING; SURFACES; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CAVITIES; CHARGED PARTICLES; COHERENT SCATTERING; CORUNDUM; DIMENSIONS; ELECTRON MICROSCOPY; ENERGY RANGE; FILMS; MEV RANGE; MICROSCOPY; MINERALS; OXIDE MINERALS; PHYSICAL PROPERTIES; SCATTERING; SILICATE MINERALS; SURFACE FINISHING

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.