Published June 21, 2012
| Version v1
Journal article
Determining the drift time of charge carriers in p-type point-contact HPGe detectors
Creators
- 1. Nuclear Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States)
- 2. Department of Nuclear Engineering, University of California, 4155 Etcheverry Hall, MC 1730, Berkeley, CA 94720 (United States)
Description
An algorithm to determine the drift time of charge carriers in p-type point contact (PPC) high-purity germanium (HPGe) detectors from the signals processed with a charge-sensitive preamplifier is introduced. It is demonstrated that the drift times can be used to estimate the distance of charge depositions from the point contact and to characterize losses due to charge trapping. A correction for charge trapping effects over a wide range of energies is implemented using the measured drift times and is shown to improve the energy resolution by up to 30%.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2012.02.047Additional details
Identifiers
- DOI
- 10.1016/j.nima.2012.02.047;
- arXiv
- arXiv:1110.0131v1;
- PII
- S0168-9002(12)00281-1;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 678
- Journal Page Range
- p. 98-104
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44115901
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ALGORITHMS; CHARGE CARRIERS; CORRECTIONS; DOUBLE BETA DECAY; ELECTRIC CONTACTS; ENERGY RESOLUTION; GERMANIUM; HIGH-PURITY GE DETECTORS; SIGNALS; TRAPPING
- Descriptors DEC
- BETA DECAY; BETA-MINUS DECAY; DECAY; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; GE SEMICONDUCTOR DETECTORS; MATHEMATICAL LOGIC; MEASURING INSTRUMENTS; METALS; NUCLEAR DECAY; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.