Published August 2019 | Version v1
Journal article

Edge chipping minimisation strategy for milling of monocrystalline silicon: A molecular dynamics study

  • 1. Mechanical Engineering, School of Engineering, Newcastle University, Newcastle Upon Tyne NE1 7RU (United Kingdom)
  • 2. Electrical and Electronic Engineering, School of Engineering, Newcastle University, Newcastle Upon Tyne NE1 7RU (United Kingdom)

Description

Direct patterning of functional microstructures on monocrystalline silicon by mechanical micro milling has drawn intense interests as an alternative to the conventional lithography techniques in microelectronics fabrication. Despite mechanical micro milling offering advantages such as high versatility and low operating cost, machining-induced defects such as edge chipping occur on the surface edges of a finished product, and it may affect its functionality. To address this challenge, a novel hybrid technique that combines mechanical machining and the deposition of a layered sacrificial structure on the silicon surface has been proposed to minimise the machining-induced edge chipping. In this paper, the feasibility and cutting mechanism of silicon under the proposed hybrid technique has been studied by molecular dynamics simulation. Underlying mechanisms such as material deformation, chip formation and stress behaviour are analysed. Reduction of the stress intensity and cutting forces were observed when silicon was machined under the proposed hybrid conditions. The effect is due to thermal softening, which resulted from the high cutting temperature and the interfacial stress between the copper and the silicon layers. Also, machining monocrystalline silicon by the proposed hybrid technique also showed desirable properties which include low subsurface damages, large material removal rate and better surface finishing (Rq < 0.1 nm).

Additional details

Identifiers

DOI
10.1016/j.apsusc.2019.05.030;
PII
S0169433219313364;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
486
Journal Page Range
p. 166-178
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
55046158
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPUTERIZED SIMULATION; COPPER; DEFECTS; DEFORMATION; FABRICATION; LAYERS; MICROELECTRONICS; MICROSTRUCTURE; MOLECULAR DYNAMICS METHOD; SILICON; SURFACE FINISHING; SURFACES
Descriptors DEC
CALCULATION METHODS; ELEMENTS; METALS; SEMIMETALS; SIMULATION; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2019 Published by Elsevier B.V.