Published November 1972
| Version v1
Journal article
On threshold energy anisotropy of primary radiation-induced defect forming in silicon
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Об анизотропии пороговой энергии образования первичных радиационных дефектов в кремнии
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 6
- Journal Issue
- 11
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2276-2278
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4059597
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANISOTROPY; ASYMMETRY; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON SPIN RESONANCE; IRRADIATION; KEV RANGE 100-1000; KINETICS; RADIATION EFFECTS; SILICON; SPECTRA; THRESHOLD ENERGY; VAN DE GRAAFF ACCELERATORS
- Descriptors DEC
- ACCELERATORS; CRYSTAL STRUCTURE; ELECTROSTATIC ACCELERATORS; ELEMENTS; ENERGY; ENERGY RANGE; KEV RANGE; MAGNETIC RESONANCE; RESONANCE; SEMIMETALS
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.