Fabrication of single electron tunneling devices using layered structures of high-Tc superconducting materials

We have fabricated the submicron structures using high-Tc superconducting materials of Bi2Sr2CuO6+δ (Bi-2201). The stacks of layered structures are made by focused-ion-beam (FIB) etching methods. The fabricated 3D three terminal devices consist of source, drain and gate electrodes on the same chip. A gate electrode is capacitively coupled to a central island between two ultra-small tunnel junctions with in plane area S = 0.25 μm2 in series. Two stacks including an island structure show a Coulomb blockade region of 15 mV at zero gate potential. The effects are not smeared out by thermal fluctuations until temperatures greater than 150 K are reached