Published June 1986
| Version v1
Journal article
Mobile ions in oxygen plasma treated thermal Si02
Creators
- 1. Bylgarska Akademiya na Naukite, Sofia. Inst. po Fizika na Tvyrdoto Tyalo
Description
The effect of oxygen plasma exposure on the motion of mobile ions in Si02-Si structures has been investigated. The ion transport was found to be limited by ion traps at the outer surface. A plasma-induced mobilization effect was observed only at 3000C substrate temperature during plasma exposure. At lower temperatures some interrelation of Na and H ions is suggested based on the behaviour of the different charge centres. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Eff.
- Journal Volume
- 88
- Journal Issue
- 3-4
- Series
- Radiat. Eff.
- Journal Page Range
- 299-303
- ISSN
- 0033-7579
- CODEN
- RAEFB
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 17079789
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC POTENTIAL; FILMS; HYDROGEN IONS; ION MOBILITY; MEDIUM TEMPERATURE; OXYGEN; PLASMA; SILICON OXIDES; SODIUM IONS; TEMPERATURE DEPENDENCE; TRAPPING
- Descriptors DEC
- ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; IONS; MOBILITY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; SILICON COMPOUNDS