Published April 17, 1978 | Version v1
Journal article

Trapping of defects at 111In impurities in e--irradiated Al

  • 1. Hahn-Meitner-Institut fuer Kernforschung Berlin G.m.b.H. (Germany, F.R.)
  • 2. Kernforschungsanlage Juelich G.m.b.H. (Germany, F.R.). Inst. fuer Festkoerperforschung

Description

Tbe trapping and detrapping of interstitials and vacancies at 111In impurities in aluminium after low-temperature electron irradiation was observed. Using perturbed angular correlation of 111Cd the electric field gradients caused by nearby lattice defects were determined and used to monitor the formation and dissociation of impurity-defect complexes. (Auth.)

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Identifiers

Publishing Information

Journal Title
Physics Letters A
Journal Volume
66
Journal Issue
1
Series
Phys. Lett., A.
Journal Page Range
57-59
ISSN
0375-9601

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